Add 'Semiconductors/ IC_Chips_IRF3205.md'
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Semiconductors/ IC_Chips_IRF3205.md
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[datasheet](https://pdf1.alldatasheet.com/datasheet-pdf/view/68131/IRF/IRF3205.html)
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## Description
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Specifically designed for Automotive applications, this HEXFET® power MOSFET has a 200°C max operating temperature with a Stripe Planar design that utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET® power MOSFET are fast switching speed and improved repetitive avalanche rating.
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The continuing technology leadership of Internationl Rectifier provides 200°C operating temperature in a plastic package. At high ambient temperatures, the IRF1704 can carry up to 20% more current than similar 175 °C Tj max devices in the same package outline. This makes this part ideal for existing and emerging under-the-hood automotive applications such as Electric Power Steering (EPS), Fuel / Water Pump Control and wide variety of other applications.
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## Benefits
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• 200°C Operaing Temperature
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• Advanced Process Technology
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• Ultra Low On-Resistance
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• Dynamic dv/dt Rating
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• Fast Switching
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• Repetitive Avalanche Allowed up to Tj Max
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• Automotive Qualified (Q101)
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## projects
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### motor controll
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