530758751a
The most significant changes are the BJT model and "binning". New features: 1. BJT model. 2. "Binning" for all MOS models. 3. Internal element: non-quasi-static poly-capacitor. (needed by BJT). 4. Enhancements to the data structures and model compiler to support binning in general. 5. A line prefixed by "*>" is not ignored, in spite of the fact that "*" usually begins a comment. This is a deliberate incompatibility with Spice. If you prefix a line by "*>" it will be interpreted as a non-comment in Gnucap, but a comment in Spice. 6. Circuit line prefixes of ">" and command prefixes of "-->" are ignored. This is so you can copy and paste whole lines, without having to manually remove the prompt string. Changes that may or may not be improvements. 1. It is not the default to include stray resistance in device models. The option "norstray" will revert to the old behavior. This is only a change to the default value of "rstray". Significant internal changes: 1. The internal element non-quasi-static poly-capacitor actually works. It is used by the BJT model, and will eventually be used by MOSFET models. 2. There are now two poly_g devices: "CPOLY_G" and "FPOLY_G". There are interface differences that impact modeling. Previously, there was only one, which is equivalent to the "FPOLY_G". |
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